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We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet  positive  resist‐type and Ar ion‐beam  negative  resist‐type etching techniques were employed to develop UV‐modified films. V 2 O 5   films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub‐micron lithography. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

UV laser modification and selective ion‐beam etching of amorphous vanadium pentoxide thin films