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We propose a theoretical ground for emissive capacitively coupled radio‐frequency (rf) plasma sheath under low pressure. The rf sheath is assumed to be collisionless and oscillates with external source. A known sinusoidal voltage instead of current is taken as prerequisite to derive sheath dynamics. Kinetic studies are performed to determine mean wall potential as a function of secondary emission coefficient and applied voltage amplitude, with which the complete mean direct current sheath is resolved. Analytical analyses under homogeneous model and numerical analyses under inhomogeneous model are conducted to deduce real‐time sheath properties including space potential, sheath capacitance, and stochastic heating. Obtained results are validated by a continuum kinetic simulation without ionization. The influences of collisionality and ionization induced by secondary electrons are elucidated with a particle‐in‐cell simulation, which further formalizes proposed theories and inspires future works.

On the role of secondary electron emission in capacitively coupled radio‐frequency plasma sheath: A theoretical ground