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Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement
Author(s) -
Shanmuganathan Poorvasha,
Balasubramanian Lakshmi
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2633
Subject(s) - doping , oscillation (cell signaling) , materials science , transistor , optoelectronics , field effect transistor , admittance , radio frequency , tunnel field effect transistor , double gate , and gate , condensed matter physics , electrical engineering , logic gate , mosfet , physics , voltage , chemistry , engineering , electrical impedance , biochemistry
Abstract This paper compares the radio frequency (RF) performance enhancement of GaSb/Si‐based double gate (DG) tunnel field‐effect transistors (TFETs) and DG TFETs with gate‐drain overlap devices using technology computer‐aided design (TCAD) simulations. The geometrical parameters taken under consideration are gate length (L g ), gate oxide thickness (t ox ), channel thickness (t ch ), and doping parameters are channel doping (N ch ), drain doping (N d ), and source doping (N s ). These parameters are varied to extract the RF parameters, cut‐off frequency (f t ), maximum oscillation frequency (f max ), intrinsic gain, and admittance (Y) parameters. DG TFET with gate‐drain overlap offers highest f max values of 977 GHz for drain doping of 1e20 cm −3 . Higher values of output resistance (R o ) results in high intrinsic gain values for DG TFET with gate‐drain overlap. In terms of Y parameters, DG TFET with gate‐drain overlap shows better Y 11 and Y 22 values compared with DG TFET. A quantitative model as a function of geometrical and doping parameters is modelled for all the RF parameters that validate the simulated values and predicted values.