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Precipitation of supersaturated chromium solutions in gallium arsenide
Author(s) -
Bochkareva V. A.,
Maksimov S. K.,
Sokolov E. B.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170217
Subject(s) - chromium , precipitation , gallium arsenide , supersaturation , transmission electron microscopy , dislocation , materials science , gallium , doping , solid solution , crystallography , analytical chemistry (journal) , metallurgy , inorganic chemistry , chemistry , nanotechnology , optoelectronics , physics , organic chemistry , chromatography , meteorology
Transmission electron microscopy has been used to investigate precipitation processes in gallium arsenide doped with chromium and Cr 2 O 3 . Whatever the doping technique, at concentrations of chromium 4 × 10 16 cm −3 the solid solution was observed to contain precipitates which grew, at least partially, due to the migration of substitutional atoms and their transformation into the precipitates. The process is accompanied by generation of vacancies from dislocation loops.