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Numerical modeling and investigation of liquid phase epitaxy of Hg 1–x Cd x Te infrared detectors
Author(s) -
Lin K.,
Dold P.,
Figgemeier H.,
Benz K. W.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410442
Subject(s) - epitaxy , liquid phase , infrared , detector , numerical modeling , field (mathematics) , phase (matter) , materials science , infrared detector , analytical chemistry (journal) , chemistry , thermodynamics , physics , optics , nanotechnology , mathematics , chromatography , geophysics , organic chemistry , layer (electronics) , pure mathematics
Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te‐rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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