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Influence of Dopant Loading on the Photo‐ and Electrochemical Properties of (N, O)‐Co‐doped Graphene.
Author(s) -
Baldoví Hermenegildo G.,
Albarracín Ferran,
Álvaro Mercedes,
Ferrer Belén,
García Hermenegildo
Publication year - 2015
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201500306
Subject(s) - dopant , graphene , doping , electrochemistry , materials science , chemical engineering , nanotechnology , chemistry , electrode , optoelectronics , engineering
Abstract A series of (N, O)‐co‐doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conduction‐band potential and charge‐separation quantum yield increase, whereas the charge‐separation lifetime decreases.