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Stability of Optically Injected Two‐State Quantum‐Dot Lasers
Author(s) -
Meinecke Stefan,
Lingnau Benjamin,
Röhm André,
Lüdge Kathy
Publication year - 2017
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201600279
Subject(s) - lasing threshold , laser , quantum dot laser , bistability , optoelectronics , optical bistability , semiconductor laser theory , photonics , quantum dot , semiconductor , materials science , physics , stability (learning theory) , optics , nonlinear optics , computer science , machine learning
Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.