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We report the results of an experimental study of the magnetoresistance ρ xx  and ρ xy  in two samples of p‐Si/SiGe with low carrier concentrations p = 8.2 × 10 10  cm ‐2  and p = 2 × 10 11  cm ‐2 . The research was performed in the temperature range of 0.3–2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two‐dimensional (2D) channel plane. The large in‐plane magnetoresistance can be explained by the influence of the in‐plane magnetic field on the orbital motion of the charge carriers in the quasi‐2D system. The measurements of ρ xx  and ρ xy  in the tilted magnetic field showed that the anomaly in ρ xx , observed at filling factor ν = 3/2 is practically nonexistent in the conductivity σ xx . The anomaly in σ xx  at ν = 2 might be explained by overlapping of the levels with different spins 0 ↑ and 1 ↓ when the tilt angle of the applied magnetic field is changed. The dependence of g‐factor g * (Θ)/g * (0 0 ) on the tilt angle Θ was determined.

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields