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A 2D heterostructure consisting of few‐layer direct bandgap ReS 2 , a thin h‐BN layer, and a monolayer graphene (Gr) for application to various electronic devices is investigated. Metal‐insulator‐semiconductor (MIS)‐type devices with 2D van‐der‐Waals (vdW) heterostructures are recently studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS 2 /h‐BN/Gr exhibit light tunable rectifying behaviors with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS‐type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field‐effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.

ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory