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Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, integration of PCMs with nanophotonic structures has introduced a new paradigm for non‐volatile reconfigurable optics. However, the high loss of the archetypal PCM Ge 2 Sb 2 Te 5  in both visible and telecommunication wavelengths has fundamentally limited its applications. Sb 2 S 3  has recently emerged as a wide‐bandgap PCM with transparency windows ranging from 610 nm to near‐IR. In this paper, the strong optical phase modulation and low optical loss of Sb 2 S 3  are experimentally demonstrated for the first time in integrated photonic platforms at both 750 and 1550 nm. As opposed to silicon, the thermo‐optic coefficient of Sb 2 S 3  is shown to be negative, making the Sb 2 S 3 –Si hybrid platform less sensitive to thermal fluctuation. Finally, a Sb 2 S 3  integrated non‐volatile microring switch is demonstrated which can be tuned electrically between a high and low transmission state with a contrast over 30 dB. This work experimentally verifies prominent phase modification and low loss of Sb 2 S 3  in wavelength ranges relevant for both solid‐state quantum emitter and telecommunication, enabling potential applications such as optical field programmable gate array, post‐fabrication trimming, and large‐scale integrated quantum photonic network.

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material