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A new member of the layered pseudo‐1D material family—monoclinic gallium telluride (GaTe)— is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy