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The combination of high‐quality Al 2 O 3  dielectric and thiol chemistry passivation  can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm 2  V −1  s −1  (337 cm 2  V −1  s −1 ) is reached at room temperature (low temperature) for monolayer WS 2 . A theoretical model for electron transport is also developed.

High‐Performance Monolayer WS 2 Field‐Effect Transistors on High‐κ Dielectrics