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A striking universality in the electric‐field‐driven resistive switching  is shown in three prototypical narrow‐gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non‐trivial accumulation and relaxation times that are verified experimentally.

Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators