English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS 3 ) are studied here. The high breakdown current densities of up to 1.7 × 10 6  A cm −2  are observed in TiS 3  nanoribbon‐based field‐effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, a thermogravimetric analysis of bulk TiS 3  is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS 3  and subsequent desorption of sulfur atoms play an important role in the electrical breakdown of the material in ambient conditions. The results show that TiS 3  is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

High Current Density Electrical Breakdown of TiS 3 Nanoribbon‐Based Field‐Effect Transistors