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Kelvin probe microscopy (KPFM) is a well-established scanning probetechnique, used to measure surface potential accurately; it has found extensiveuse in the study of a range of materials phenomena. In its conventional form,KPFM frustratingly precludes imaging samples or scenarios where large surfacepotential exists or large surface potential gradients are created outside thetypical +/-10V window. If the potential regime measurable via KPFM could beexpanded, to enable precise and reliable metrology, through a high voltage KPFM(HV-KPFM) adaptation, it could open up pathways towards a range of novelexperiments, where the detection limit of regular KPFM has so far prevented theuse of the technique. In this work, HV-KPFM has been realised and shown to becapable of measuring large surface potential and potential gradients withaccuracy and precision. The technique has been employed to study a range ofmaterials (positive temperature coefficient of resistivity ceramics, chargestorage fluoropolymers and pyroelectrics) where accurate spatially resolvedmapping of surface potential within high voltage regime facilitates novelphysical insight. The results demonstrate that HV-KPFM can be used as aneffective tool to fill in existing gaps in surface potential measurements whilealso opening routes for novel studies in materials physics.

Spatially Resolved High Voltage Kelvin Probe Force Microcopy: A Novel Avenue for Examining Electrical Phenomena at Nanoscale