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Electrical manipulation of magnetic order by current-induced spin torqueslays the foundation for spintronics. One promising approach is encodinginformation in the N\'eel vector of antiferromagnetic (AFM) materials,particularly to collinear antiferromagnets with the perpendicular magneticanisotropy (PMA), as the negligible stray fields and terahertz spin dynamicscan enable memory devices with higher integration density and ultrafast speed.Here we demonstrate that the N\'eel order information in a prototypicalcollinear AFM insulator with PMA, Cr2O3, can be reliably readout via theanomalous Hall effect and efficiently switched by the spin-orbit torque (SOT)effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as amediator, we electrically switch the magnetization of a Y3Fe5O12 filmexchange-coupled to the Cr2O3 layer, unambiguously confirming the N\'eel orderswitching of the Cr2O3 layer. This work provides a significant basis fordeveloping AFM memory devices based on collinear AFM materials with PMA.

Electrical switching of the perpendicular Neel order in a collinear antiferromagnet