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This study introduces the Reciprocal Space Polar Visualization (RSPV) method,a novel approach for visualizing X-ray diffraction-based reciprocal space data.RSPV allows for the precise separation of tilt and strain, facilitating theirindividual analysis. InSb was grown by molecular beam epitaxy (MBE) on two(001) GaAs substrates $\unicode{x2014}$ one with no misorientation (Sample A)$\unicode{x2014}$ one with 2{\deg} surface misorientation from the (001) planes(Sample B). There is a substantial lattice mismatch with the substrate and thisresults in the generation of defects within the InSb layer during growth. Todemonstrate RSPV's effectiveness, a comprehensive comparison of surfacemorphology, dislocation density, strain, and tilt was conducted. RSPV revealedpreviously unobserved features of the (004) InSb Bragg peak, partiallyexplained by the presence of threading dislocations and oriented abrupt steps(OASs). Surface morphologies examined by an atomic force microscope (AFM)revealed that Sample B had significantly lower root mean square (RMS)roughness. Independent estimates of threading dislocation density (TDD) usingX-ray diffraction (XRD) and electron channelling contrast imaging (ECCI)confirmed that Sample B exhibited a significantly lower TDD than Sample A. XRDmethods further revealed unequal amounts of $\alpha$ and $\beta$ type threadingdislocations in both samples, contributing to an anisotropic Bragg peak. RSPVis shown to be a robust method for exploring 3D reciprocal space in anycrystal, demonstrating that growing InSb on misoriented GaAs produced ahigher-quality crystal compared to an on-orientation substrate.

Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates