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The manuscript theoretically discusses various important aspects for donoratom based single qubit operations in silicon (Si) quantum computerarchitecture at room temperature using a single nitrogen (N) deep-donor closeto the Si/SiO2 interface. Quantitative investigation of room temperature singleelectron shuttling between a single N-donor atom and the interface is the focusof attention under the influence of externally applied electric and magneticfield. To apprehend the realistic experimental configurations, central cellcorrection along with effective mass approach is adopted throughout the study.Furthermore, a detailed discussion currently explores the significant timescales implicated in the process and their suitability for experimentalpurposes. Theoretical estimates are also provided for all the external fieldsrequired to successfully achieve coherent single electron shuttling and theirstable maintenance at the interface as required. The results presented in thiswork offer practical guidance for quantum electron control using N-donor atomsin Si at room temperature.

Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface