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The studies of electronic effects in reduced dimensionality have become afrontier in nanoscience due to exotic and highly tunable character of quantumphenomena. Recently, a new class of 2D ultrathin Ln$X_2$ metalloxenes composedof a triangular lattice of lanthanide ions (Ln) coupled with 2D-Xenes ofsilicene or germanene ($X_2$) was introduced and studied with a particularfocus on magnetic and transport properties. However, the electronic propertiesof metalloxenes and their effective functionalization remain mainly unexplored.Here, using a number of experimental and theoretical techniques, we trace theevolution of electronic properties and magnetic ground state of metalloxenestriggered by external perturbations. We demonstrate that the band structure ofLn$X_2$ films can be uniquely modified by controlling the Xenes stacking,thickness, varying the rare-earth and host elements, and applying an externalelectric field. Our findings suggest new pathways to manipulate the electronicproperties of 2D rare-earth magnets that can be adjusted for spintronicsapplications.

Unveiling the stacking-dependent electronic properties of 2D ultrathin rare-earth metalloxenes family LnX$_2$ (Ln = Eu, Gd, Dy; X = Ge, Si)