English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Flash memory has been widely adopted as stand-alone memory and embeddedmemory due to its robust reliability. However, the limited endurance obstaclesits further applications in storage class memory (SCM) and to proceedendurance-required computing-in-memory (CIM) tasks. In this work, theoptimization strategies have been studied to tackle this concern. It is shownthat by adopting the channel hot electrons injection (CHEI) and hot holeinjection (HHI) to implement program/erase (PE) cycling together with abalanced memory window (MW) at the high-Vth (HV) mode, impressively, theendurance can be greatly extended to 1010 PE cycles, which is a record-highvalue in flash memory. Moreover, by using the proposed electric-field-assistedrelaxation (EAR) scheme, the degradation of flash cells can be well suppressedwith better subthreshold swings (SS) and lower leakage currents (sub-10pA after1010 PE cycles). Our results shed light on the optimization strategy of flashmemory to serve as SCM and implementendurance-required CIM tasks.

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities