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SnS2 stands out as a highly promising two-dimensional material withsignificant potential for applications in the field of electronics. Numerousattempts have been undertaken to modulate the physical properties of SnS2 bydoping with various metal ions. Here, we deposited a series of Sb-doped SnS2via atomic layer deposition (ALD) super-cycle process and compared itscrystallinity, composition, and optical properties to those of pristine SnS2.We found that the increase in the concentration of Sb is accompanied by agradual reduction in the Sn and S binding energies. The work function isincreased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improvedperformances, demonstrating increased peak photoresponsivity values from 19.5A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed.These results offer valuable insights into next-generation optoelectronicapplications based on SnS2.

SnS2 thin film with in-situ and controllable Sb doping via atomic layer deposition for optoelectronic applications