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Electrically driven insulator-metal transitions in prototypical quantummaterials such as VO2 offer a foundational platform for designing novelsolid-state devices. Tuning the V: O stoichiometry offers a vast electronicphase space with non-trivial collective properties. Here, we report thediscovery of discrete threshold switching voltages with constant thresholdvoltage difference between cycles in vanadium oxide crystals. The observedthreshold fields over 10000 cycles are ~100X lower than that noted forstoichiometric VO2 and show unique discrete behaviour. We correlate theobserved discrete memristor behaviour with the valence change mechanism andfluctuations in the chemical composition of spatially distributed VO2-VnO2n-1complex oxide phases. Design of chemical heterogeneity in Mott insulators,therefore, offers an intriguing path to realizing low-energy neuromorphicdevices.

Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals