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Electrostatically tunable Josephson field-effect transistors (JoFETs) are oneof the most desired building blocks of quantum electronics. JoFET applicationsrange from parametric amplifiers and superconducting qubits to a variety ofintegrated superconducting circuits. Here, we report on graphene JoFET devicesfabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS)compatible processing based on wet transfer of chemical vapour depositedgraphene, atomic-layer-deposited Al$_{2}$O$_{3}$ gate oxide, and evaporatedsuperconducting Ti/Al source, drain, and gate contacts. By optimizing thecontact resistance down to $\sim$ 170 $\Omega \mu m$, we observeproximity-induced superconductivity in the JoFET channels with different gatelengths of 150 - 350 nm. The Josephson junction devices show reproduciblecritical current $I_{\text{C}}$ tunablity with the local top gate. Our JoFETsare in short diffusive limit with the $I_{\text{C}}$ reaching up to $\sim\,$3$\mu A$ for a 50 $\mu m$ channel width. Overall, our successful demonstrationof CMOS-compatible 2D-material-based JoFET fabrication process is an importantstep toward graphene-based integrated quantum circuits.

Wafer-scale CMOS-compatible graphene Josephson field-effect transistors