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We systematically investigated the effects of charge doping and strain onmonolayer Fe$_3$GaTe$_2$, and proposed three new novel two-dimensional magneticmaterials: monolayer Fe$_3$GaX$_2$ (X=I, Br, Sb). We found that both strain andcharge doping can tune the magnetic interactions, and the tuning by chargedoping is more significant. Differential charge analysis revealed that thedoped charges predominantly accumulate around Te atoms. Based on this insight,we introduced Fe$_{3}$GaI$_{2}$, Fe$_{3}$GaBr$_{2}$, and Fe$_{3}$GaSb$_{2}$monolayers. The Fe$_{3}$GaI$_{2}$ and Fe$_{3}$GaBr$_{2}$ monolayers contain Iand Br atoms rather than Te atoms, emulate electron-doped Fe$_{3}$GaTe$_{2}$monolayer, resulting in notably high T$_c$ values of 867 K and 844 K,respectively. In contrast, the Fe$_3$GaSb$_2$ monolayer mimics hole-dopedFe$_{3}$GaTe$_{2}$ monolayer, presents a mix of FM and antiferromagneticinteractions, manifesting a distinctive partially ordered magnetic state. Ourstudy demonstrates that substitution atoms based on the charge-doping effectoffer a promising approach for predicting new magnetic materials. The proposedFe$_{3}$GaI$_{2}$, Fe$_{3}$GaBr$_{2}$, and Fe$_{3}$GaSb$_{2}$ monolayers holdgreat potential for spintronics applications, and may stimulate the pursuit ofnew types of spin liquid.

Monolayer Fe$_{3}$GaX$_{2}$ (X=I, Br, Sb): high-temperature two-dimensional magnets and a novel partially ordered spin state