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Efficient scattering into the exciton polariton ground state is a keyprerequisite for generating Bose-Einstein condensates and low-thresholdpolariton lasing. However, this can be challenging to achieve at low densitiesdue to the polariton bottleneck effect that impedes phonon-driven scatteringinto low-momentum polariton states. The rich exciton landscape of transitionmetal dichalcogenides (TMDs) provides potential intervalley scattering pathwaysvia dark excitons to rapidly populate these polaritons. Here, we present amicroscopic study exploring the time- and momentum-resolved relaxation ofexciton polaritons supported by a \ce{MoSe2} monolayer integrated within aFabry-Perot cavity. By exploiting phonon-assisted transitions betweenmomentum-dark excitons and the lower polariton branch, we demonstrate that itis possible to circumvent the bottleneck region and efficiently populate thepolariton ground state. Furthermore, this intervalley pathway is predicted togive rise to, yet unobserved, angle-resolved phonon sidebands inlow-temperature photoluminescence spectra that are associated withmomentum-dark excitons. This represents a distinctive experimental signaturefor efficient phonon-mediated polariton-dark-exciton interactions.

Circumventing the polariton bottleneck via dark excitons in 2D semiconductors