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Altermagnets are compensated magnets belonging to spin symmetry groups thatallow alternating spin polarizations both in the coordinate space of thecrystal and in the momentum space of the electronic structure. In thesematerials the anisotropic local crystal environment of the differentsublattices lowers the symmetry of the system so that the opposite-spinsublattices are connected only by rotations, which results in an unconventionalspin-polarized band structure in the momentum space. This low symmetry of thecrystal structure is expected to be reflected in the anisotropy of theanomalous Hall effect. In this work, we study the anisotropy of the anomalousHall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidatematerial. We first demonstrate a change in the relative N\'eel vectororientation when rotating the external field orientation through systematicchanges in both the anomalous Hall effect and the anisotropic longitudinalmagnetoresistance. We then show that the anomalous Hall effect in this materialis anisotropic with the N\'eel vector orientation relative to the crystalstructure and that this anisotropy requires high crystal quality and unlikelycorrelates with the magnetocrystalline anisotropy. Our results provide furthersystematic support to the case for considering epitaxial thin films ofMn$_5$Si$_3$ as an altermagnetic candidate material.

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films