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Wurtzite gallium nitride (GaN) has great potential for high-frequency andhigh-power applications due to its excellent electrical and thermal transportproperties. However, enhancing the performance of GaN-based power electronicsrelies on heavy doping. Previous studies showed that electron-phononinteractions have strong effects on the lattice thermal conductivity of GaN dueto the Fr\"ohlich interaction. Surprisingly, our investigation reveals weakeffects of electron-phonon interactions on the lattice thermal conductivity ofn-type GaN at ultra-high electron concentrations and the impact of theFr\"ohlich interaction can be ignored. The small phonon-electron scatteringrate is attributed to the limited scattering channels, quantified by the Fermisurface nesting function. In contrast, there is a significant reduction in thelattice thermal conductivity of p-type GaN at high hole concentrations due tothe relatively larger Fermi surface nesting function. Meanwhile, as p-type GaNhas relatively smaller electron-phonon matrix elements, the reduction inlattice thermal conductivity is still weaker than that observed in p-typesilicon. Our work provides a deep understanding of thermal transport in dopedGaN and the conclusions can be further extended to other wide-bandgapsemiconductors, including $\beta$-Ga2O3, AlN, and ZnO.

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations