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Gallium nitride (GaN) has great potential for high-frequency and high-powerapplications due to its excellent electrical and thermal transport properties.However, enhancing the performance of GaN-based power electronics relies onheavy doping. Previous studies show that electron-phonon interactions havestrong effects on the lattice thermal conductivity of GaN due to the Fr\"ohlichinteraction. Surprisingly, our investigation reveals weak effects ofphonon-electron interactions on the lattice thermal conductivity of n-type GaNat ultra-high electron concentrations, and the impact of the Fr\"ohlichinteraction can be ignored. The small phonon-electron scattering rate isattributed to the limited scattering channels, quantified by the Fermi surfacenesting function. In contrast, there is a significant reduction in the latticethermal conductivity of p-type GaN at high hole concentrations due to the largeFermi surface nesting function. However, as p-type GaN has relatively smallerelectron-phonon matrix elements, the reduction in lattice thermal conductivityis weaker than that observed in p-type silicon. Our work provides a deepunderstanding of thermal transport in doped GaN and the conclusions can befurther extended to other wide-bandgap semiconductors, including \{beta}-Ga2O3,AlN, ZnO, etc.

Unexpected weak effects of phonon-electron interactions on the lattice thermal conductivity of high-concentration n-type GaN