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Nonlinear charge transport, including nonreciprocal longitudinal resistanceand nonlinear Hall effect, has garnered significant attention due to itsability to explore inherent symmetries and topological properties of novelmaterials. An exciting recent progress along this direction is the discovery ofsignificant nonreciprocal longitudinal resistance and nonlinear Hall effect inthe intrinsic magnetic topological insulator MnBi2Te4 induced by the quantummetric dipole. Given the importance of this finding, the inconsistent responsewith charge density, and conflicting requirement of C3z symmetry, it isimperative to elucidate every detail that may impact the nonlinear transportmeasurement. In this study, we reveal an intriguing experimental factor thatinevitably gives rise to sizable nonlinear transport signal in MnBi2Te4. Wedemonstrate that this effect stems from the gate voltage oscillation caused bythe application of a large alternating current to the sample. Furthermore, wepropose a methodology to significantly suppress this effect by individuallygrounding the voltage electrodes during the second-harmonic measurements. Ourinvestigation emphasizes the critical importance of thoroughly assessing theimpact of gate voltage oscillation before determining the intrinsic nature ofnonlinear transport in all 2D material devices with an electrically connectedoperative gate electrode.

Nonlinear charge transport induced by gate voltage oscillation in few-layer MnBi2Te4