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Development of power efficient spintronics devices has been the compellingneed in the post-CMOS technology era. The effective tunability ofspin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materialsstacking is a prerequisite for scaling down the dimension and power consumptionof these devices. In this work, we demonstrate the strong chemisorption of C60molecules when grown on the high SOC $\beta$-W layer. The parent CFB/$\beta$-Wbilayer exhibits large spin-to-charge interconversion efficiency, which can beascribed to the interfacial SOC observed at the Ferromagnet/Heavy metalinterface. Further, the adsorption of C60 molecules on $\beta$-W reduces theeffective Gilbert damping by $\sim$15% in the CFB/$\beta$-W/C60heterostructures. The anti-damping is accompanied by a gigantic $\sim$115%enhancement in the spin-pumping induced output voltage owing to the molecularhybridization. The non-collinear Density Functional Theory calculations confirmthe long-range enhancement of SOC of $\beta$-W upon the chemisorption of C60molecules, which in turn can also enhance the SOC at the CFB/$\beta$-Winterface in CFB/$\beta$-W/C60 heterostructures. The combined amplification ofbulk as well interfacial SOC upon molecular hybridization stabilizes theanti-damping and enhanced spin-to-charge conversion, which can pave the way forthe fabrication of power efficient spintronics devices.

Molecular Hybridization Induced Antidamping and Sizable Enhanced Spin-to-Charge Conversion in Co20Fe60B20/$\beta$-W/C60 Heterostructures