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In condensed matter physics, the Kagome lattice and its inherent flat bandshave attracted considerable attention for their potential to host a variety ofexotic physical phenomena. Despite extensive efforts to fabricate thin films ofKagome materials aimed at modulating the flat bands through electrostaticgating or strain manipulation, progress has been limited. Here, we report theobservation of a novel $d$-orbital hybridized Kagome-derived flat band inAg/Si(111) $\sqrt{3}\times\sqrt{3}$ as revealed by angle-resolved photoemissionspectroscopy. Our findings indicate that silver atoms on a silicon substrateform a Kagome-like structure, where a delicate balance in the hoppingparameters of the in-plane $d$-orbitals leads to destructive interference,resulting in a flat band. These results not only introduce a new platform forKagome physics but also illuminate the potential for integratingmetal-semiconductor interfaces into Kagome-related research, thereby opening anew avenue for exploring ideal two-dimensional Kagome systems.

An unconventional platform for two-dimensional Kagome flat bands on semiconductor surfaces