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In Si/SiGe heterostructures, the low-lying excited valley state seriouslylimit operability and scalability of electron spin qubits. For characterizingand understanding the local variations in valley splitting, fast probingmethods with high spatial and energy resolution are lacking. Leveraging thespatial control granted by conveyor-mode spin-coherent electron shuttling, weintroduce a method for two-dimensional mapping of the local valley splitting bydetecting magnetic field dependent anticrossings of ground and excited valleystates using entangled electron spin-pairs as a probe. The method hassub-{\mu}eV energy accuracy and a nanometer lateral resolution. The histogramof valley splittings spanning a large area of 210 nm by 18 nm matches well withstatistics obtained by the established but time-consuming magnetospectroscopymethod. For the specific heterostructure, we find a nearly Gaussiandistribution of valley splittings and a correlation length similar to thequantum dot size. Our mapping method may become a valuable tool for engineeringSi/SiGe heterostructures for scalable quantum computing.

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling