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Janus transition metal dichalcogenides (JTMDs) have attracted much attentionbecause of their outstanding electronic and optical properties. The additionalout-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and thismay be used in device applications such as pin diodes and photovoltaic cells.In this study, we exploit this property to design n- and p-typemetal-oxide-semiconductor field effect transistors (MOSFETs). First, we usedensity-functional theory calculations to study the inherent dipole fieldstrength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes bandbending at both the metal/MoSSe and MoSSe/metal interfaces, resulting inelectron and hole accumulation to form n- and p-type Ohmic contact regions. Weincorporate this property into a 2D finite-element-basedPoisson-drift-diffusion solver to perform simulations, on the basis of which wedesign complementary MOSFETs. Our results demonstrate that JTMDs can be used tomake n- and p-MOSFETs in the same layer without the need for any extra doping.

Utilizing the Janus MoSSe surface polarization property in complementary metal-oxide-semiconductor field effect transistor design