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Manipulating carrier density through gate effects, both in electrostaticcharge storage and electrochemical intercalation mode, offers powerful controlover material properties, although commonly restricted to ultra-thin films orvan der Waals materials. Here we demonstrate the application of gate-drivencarrier modulation in the microdevice of magnetic Weyl semimetal Co3Sn2S2,fabricated from a bulk single crystal via focused ion beam (FIB). We discovereda Li-intercalated phase LixCo3Sn2S2 featuring electron doping exceeding 5*1021cm-3, resulting in the Fermi energy shift of 200 meV. The carrier densitydependent anomalous Hall conductivity shows fair agreement with densityfunctional theory (DFT) calculation, which also predicts intercalated Li+ ionstabilization within the anion layer while maintaining the kagome-latticeintact. This likely explains the observed rigid band behavior and constantCurie temperature, contrasting with magnetic site substitution experiments. Ourfindings suggest ionic gating on FIB devices broadens the scope of gate-tuningin quantum materials.

Electron-doped magnetic Weyl semimetal LixCo3Sn2S2 by bulk-gating