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Zero-dimensional graphene quantum dots (GQD) dispersed in conducting polymermatrix display a striking range of optical, mechanical, and thermoelectricproperties which can be utilized to design next-generation sensors and low-costthermoelectric. This exotic electrical property in GQDs is achieved byexploiting the concentration of the GQDs and by tailoring the functionalizationof the GQDs. However, despite extensive investigation, the nonlinearresistivity behavior leading to memristive like characteristic has not beenexplored much. Here, we report electrical characterisation of nitrogenfunctionalized GQD (NGQD) embedded in a polyaniline (PANI) matrix. We observe astrong dependence of the resistance on current and voltage history, themagnitude of which depends on the NGQD concentration and temperature. Weexplain this memristive property using a phenomenological model of thealignment of PANI rods with a corresponding charge accumulation arising fromthe NGQD on its surface. The NGQD-PANI system is unique in its ability tomatrix offers a unique pathway to design neuromorphic logic and synapticarchitectures with crucial advantages over existing systems.

Memristive behavior of functionalized graphene quantum dot and polyaniline nanocomposites