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In the magic angle twisted bilayer graphene (MATBG), non-Fermi liquid liketransport phenomena are universally observed. To understand their origin, weperform the self-consistent analysis of the self-energy due to SU(4) valley +spin fluctuations induced by the electron-electron correlation. In the SU(4)fluctuation mechanism, the fifteen channels of fluctuations contributeadditively to the self-energy. Therefore, the SU(4) fluctuation mechanism givesmuch higher electrical resistance than the spin fluctuation mechanism. By thesame reason, SU(4) fluctuations of intermediate strength provide $T$-linearresistivity down to $\sim1$K. Interestingly, the $T$-linear resistivity isrobustly realizedfor wide range of electron filling, even away from thevan-Hove filling. This study provides a strong evidence for the importance ofelectron-electron correlation in MATBG.

Robust $T$-Linear Resistivity due to SU(4) Valley + Spin Fluctuation Mechanism in Magic Angle Twisted Bilayer Graphene