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Nonlinear behavior in the hopping transport of interacting charges enablesreconfigurable logic in disordered dopant network devices, where voltagesapplied at control electrodes tune the relation between voltages applied atinput electrodes and the current measured at an output electrode. From kineticMonte Carlo simulations we analyze the critical nonlinear aspects ofvariable-range hopping transport for realizing Boolean logic gates in thesedevices on three levels. First, we quantify the occurrence of individual gatesfor random choices of control voltages. We find that linearly inseparable gatessuch as the XOR gate are less likely to occur than linearly separable gatessuch as the AND gate, despite the fact that the number of different regions inthe multidimensional control voltage space for which AND or XOR gates occur iscomparable. Second, we use principal component analysis to characterize thedistribution of the output current vectors for the (00,10,01,11) logic inputcombinations in terms of eigenvectors and eigenvalues of the output covariancematrix. This allows a simple and direct comparison of the behavior of differentsimulated devices and a comparison to experimental devices. Third, we quantifythe nonlinearity in the distribution of the output current vectors necessaryfor realizing Boolean functionality by introducing three nonlinearityindicators. The analysis provides a physical interpretation of the effects ofchanging the hopping distance and temperature and is used in a comparison withdata generated by a deep neural network trained on a physical device.

Critical nonlinear aspects of hopping transport for reconfigurable logic in disordered dopant networks