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The direct growth of III-V compound materials on complementarymetal-oxide-semiconductor (CMOS) compatible silicon (Si) substrates has been apromising approach to creating large-scale optoelectronic devices and advancingsilicon-based photonics integration. However, III-V compounds have dissimilarproperties, leading to defects in the epitaxial layer, particularly threadingdislocations (TDs), antiphase boundaries (APBs), and thermal cracks. Thesedefects significantly impact optoelectronic device performance and must beeffectively restricted. The current epitaxy processes cannot simultaneouslysuppress the APDs, TDs, and thermal cracks. Therefore, there is a need todevelop a new technique to inhibit the TDs and APDs in a thin buffer onCMOS-compatible Si. In this paper, we employ a GaSb buffer layer during theepitaxial growth of a GaAs layer on the Si (001) substrate. This approach aimsto suppress defect formation by inducing the formation of interfacial misfitdislocation (IMF) arrays at both the AlSb/Si interface and GaSb/GaAs interface.The structural properties and defects formation mechanism were clarified bytransmission electron microscopy. Then, the GaAs layer with a step-flowsurface, rough mean square about 3.8 nm, and full width at half maximum of 158arcsec was obtained. Significantly, the growth of the GaAs layer on the GaSbbuffer layer was achieved without any discernible interfacial intermixing.Building on this platform, InAs/GaAs QDs are grown with a density of around3.8x1010 cm-2, emitting at a peak wavelength of 1288 nm. This outcome holdsgreat promise for developing high-quality GaAs films with reduced defectdensities on Si(001) substrates. High-performance optoelectronic devices can begrown on this film, enabling the mass production of Si-based integratedcircuits.

Low defect density GaAs epitaxially grown on Si(001) with ultrathin buffer by molecular beam epitaxy