English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

To realize room temperature ferromagnetic semiconductors is still a challengein spintronics. Recent experiments have obtained two-dimensional (2D) roomtemperature ferromagnetic metals, such as monolayer MnSe2. In this paper, weproposed a way to obtain room temperature ferromagnetic semiconductors throughmetal-semiconductor transition. By the density functional theory calculations,a room temperature ferromagnetic semiconductor is obtained in monolayer MnSe2with a few percent tensile strains, where a metal-semiconductor transitionoccurs with 2.2% tensile stain. The tensile stains raise the energy of dorbitals of Mn atoms and p orbitals of Se atoms near the Fermi level, makingthe Fermi level sets in the energy gap of bonding and antibonding states ofthese p and d orbitals, and opening a small band gap. The room temperatureferromagnetic semiconductors are also obtained in the heterostructures MnSe2/X(X = Al2Se3, GaSe, SiH, and GaP), where metal-semiconductor transition happensdue to the tensile strains by interface of heterostructures. In addition, alarge magneto-optical Kerr effect (MOKE) is obtained in monolayer MnSe2 withtensile strain and MnSe2-based heterostructures. Our theoretical results pave away to obtain room temperature magnetic semiconductors from experimentallyobtained 2D room temperature ferromagnetic metals through metal-semiconductortransitions.

Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2