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Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organicchemical vapour deposition are for the first time confirmed to beferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercivefield of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystalquality and homogeneous chemical composition of the film was confirmed by X-raydiffraction spectroscopic methods such as time of flight secondary ion massspectrometry. Annular bright field scanning transmission electron microscopyserved to proof the ferroelectric polarization inversion on unit cell level.The single crystal quality further allowed to image the large-scale domainpattern of a wurtzite-type ferroelectric for the first time, revealing apredominantly cone-like domain shape along the c-axis of the material. As inprevious work, this again implies the presence of strong polarizationdiscontinuities along this crystallographic axis, which could be suitable forcurrent transport. The domains are separated by narrow domain walls, for whichan upper thickness limit of 3 nm was deduced, but which could potentially beatomically sharp. We are confident that these results will advance thecommencing integration of wurtzite-type ferroelectrics to GaN as well asgenerally III-N based heterostructures and devices.

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N