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Self-assembled InAs quantum dots (QDs) are promising optomechanical elementsdue to their excellent photonic properties and sensitivity to local strainfields. Microwave-frequency modulation of photons scattered from theseefficient quantum emitters has been recently demonstrated using surfaceacoustic wave (SAW) cavities. However, for optimal performance, a gatestructure is required to deterministically control the charge state and reducecharge noise of the QDs. Here, we integrate gated QDs and SAW cavities usingmolecular beam epitaxy and nanofabrication. We demonstrate that with carefuldesign of the substrate layer structure, integration of the two systems can beaccomplished while retaining the optimal performance of each subsystem. Theseresults mark a critical step toward efficient and low-noise optomechanicalsystems for microwave-to-optical quantum transduction.

Gated InAs quantum dots embedded in surface acoustic wave cavities for low-noise optomechanics