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This study presents a comprehensive investigation into the exceptionalsuperconducting attributes of titanium nitride (TiN) achieved throughplasma-enhanced atomic layer deposition (PEALD) on both planar and intricatethree-dimensional (3D) structures. We introduced an additional substratebiasing cycle to densify the film and remove ligand residues, augmenting theproperties while minimizing impurities. While reactive-sputtered TiN filmsexhibit high quality, our technique ensures superior uniformity by consistentlymaintaining a desired sheet resistance greater than 95 percent across a 6inchwafer, a critical aspect for fabricating extensive arrays of superconductingdevices and optimizing wafer yield. Moreover, our films demonstrate exceptionalsimilarity to conventional reactive-sputtered films, consistently reaching acritical temperature (Tc) of 4.35 K with a thickness of around 40 nm. Thismarks a notable achievement compared to previously reported ALD-basedsuperconducting TiN. Using the same process as for planar films, we obtained Tcfor aspect ratios (ARs) ranging from 2 to 40, observing a Tc of approximately 2K for ARs between 2 and 10.5. We elucidate the mechanisms contributing to thelimitations and degradation of superconducting properties over these aggressive3D structures. Our results seamlessly align with both current andnext-generation superconducting technologies, meeting stringent criteria forthin-film constraints, large-scale deposition, conformality, 3D integrationschemes, and yield optimization.

Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices