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Oxide electronics provide the key concepts and materials for enhancingsilicon-based semiconductor technologies with novel functionalities. However, abasic but key property of semiconductor devices still needs to be unveiled inits oxidic counterparts: the ability to set or even switch between two types ofcarriers - either negatively (n) charged electrons or positively (p) chargedholes. Here, we provide direct evidence for individually emerging n- or p-type2D band dispersions in STO-based heterostructures using resonant photoelectronspectroscopy. The key to tuning the carrier character is the oxidation state ofan adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in theempty band gap region of STO due to hybridization of Ti and Fe-derived statesacross the interface, while for Fe$_3$O$_4$ overlayers, an 2D electron systemis formed. Unexpected oxygen vacancy characteristics arise for the hole-typeinterfaces, which as of yet had been exclusively assigned to the emergence of2DESs. In general, this finding opens up the possibility to straightforwardlyswitch the type of conductivity at STO interfaces by the oxidation state of aredox overlayer. This will extend the spectrum of phenomena in oxideelectronics, including the realization of combined n/p-type all-oxidetransistors or logic gates.

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces