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Van-Hove (vH) singularities in the vicinity of the Fermi level facilitate theemergence of electronically mediated Fermi surface instabilities. This isbecause they provide a momentum-localized enhancement of density of statesenhancing selective electronic scattering channels. High-temperaturetopological superconductivity has been argued for in graphene at vH fillingwhich, however, has so far proven inaccessible due to the demanded large dopingfrom pristine half filling. We propose compensated metallicity as a path tounlock vH-driven pairing close to half filling in an electronic honeycomblattice model. It is enabled through the strong breaking of chiral symmetryfrom intra-sublattice hybridization, leading to the emergence of a hole pocket(hp) nearby the van-Hove points $M$ at the Brillouin zone boundary and anelectron pocket (ep) around the zone center $\Gamma$. While the ep is radiallysymmetric and barely contributing to the electronic ordering selection, the hpis dominated by its vH signature and yields electronic order at elevatedscales.

Van-Hove tuning of Fermi surface instabilities through compensated metallicity