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With increasing attention in Majorana physics for possible quantum bitapplications, a large interest has been developed to understand the propertiesof the interface between a $s$-type superconductor and a topological insulator.Up to this point the interface analysis was mainly focused on in situ preparedJosephson junctions, which consist of two coupled single interfaces or toex-situ fabricated single interface devices. In our work we utilize a novelfabrication process, combining selective area growth and shadow evaporationwhich allows the characterization of a single in situ fabricatedNb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting highinterface transparency is apparent by a zero bias conductance increase by afactor of 1.7. Furthermore, we present a comprehensive differential conductanceanalysis of our single in situ interface for various magnetic fields,temperatures and gate voltages. Additionally, density functional theorycalculations of the superconductor/topological insulator interface areperformed in order to explain the peak-like shape of our differentialconductance spectra and the origin of the observed smearing of conductancefeatures.

Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon