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Si/SiGe heterostructures are of high interest for high mobility transistorand qubit applications, specifically for operations below 4.2 K. In order tooptimize parameters such as charge mobility, built-in strain, electrostaticdisorder, charge noise and valley splitting, these heterostructures require Geconcentration profiles close to mono-layer precision. Ohmic contacts to undopedheterostructures are usually facilitated by a global annealing step activatingimplanted dopants, but compromising the carefully engineered layer stack due toatom diffusion and strain relaxation in the active device region. Wedemonstrate a local laser-based annealing process for recrystallization ofion-implanted contacts in SiGe, greatly reducing the thermal load on the activedevice area. To quickly adapt this process to the constantly evolvingheterostructures, we deploy a calibration procedure based exclusively onoptical inspection at room-temperature. We measure the electron mobility andcontact resistance of laser annealed Hall bars at temperatures below 4.2 K andobtain values similar or superior than that of a globally annealed referencesamples. This highlights the usefulness of laser-based annealing to take fulladvantage of high-performance Si/SiGe heterostructures.

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K