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Ferroelectric fluorite oxides like hafnium (HfO2)-based materials areconsidered to be one of the most potential candidates for nowadays large-scaleintegrated-circuits owing to their high compatibility with silicon-basedtechnology. While zirconia (ZrO2)-based fluorites materials, which holds thesame fluorite structure, is usually thought to be anti- or week ferroelectric.Our study demonstrates a giant ferroelectric remanent polarization (Pr)amounted to 53 uC/cm2 in orthorhombic ZrO2 growing on (110) SrTiO3, which iscomparable to those most outstanding HfO2-based materials. We believe thisgiant remanent polarization stems from the irreversibleanti-ferroelectric-to-ferroelectric (AFE-to-FE) phase transition activated byelectric field, which converts the as-grown anti-ferroelectric-ferroelectricblends into purely ferroelectric ZrO2. Our study reverses the poorferroelectric opinion on ZrO2 by promoting the Pr to the best HfO2-basedmaterials level.

Giant ferroelectric polarization in ZrO2 thin film enhanced by an AFE-to-FE phase transition