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Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infraredphotodetectors but the microscopic origin underlying the photoresponse in themremains elusive. In this work, we investigated the photocurrent generation ingraphene/hBN/graphene tunnel structures with localized defect states undermid-IR illumination. We demonstrate that the photocurrent in these devices isproportional to the second derivative of the tunnel current with respect to thebias voltage, peaking during tunneling through the hBN impurity level. Werevealed that the origin of the photocurrent generation lies in the change ofthe tunneling probability upon radiation-induced electron heating in graphenelayers, in agreement with the theoretical model that we developed. Finally, weshow that at a finite bias voltage, the photocurrent is proportional to theeither of the graphene layers heating under the illumination, while at zerobias, it is proportional to the heating difference. Thus, the photocurrent insuch devices can be used for accurate measurements of the electronictemperature providing a convenient alternative to Johnson noise thermometry.

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier