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Color centers in diamond play a central role in the development of quantumphotonic technologies, and their importance is only expected to grow in thenear future. For many quantum applications, high collection efficiency fromindividual emitters is required, but the refractive index mismatch betweendiamond and air limits the optimal collection efficiency with conventionaldiamond device geometries. While different out-coupling methods with near-unityefficiency exist, many have yet to be realized due to current limitations innanofabrication methods, especially for mechanically hard materials likediamond. Here, we leverage electron-beam-induced etching to modify Sn-implanteddiamond quantum microchiplets containing integrated waveguides with width andthickness of 280 nm and 200 nm, respectively. This approach allows forsimultaneous high-resolution imaging and modification of the host matrix withan open geometry and direct writing. When coupled with the cathodoluminescencesignal generated from the electron-emitter interactions, we can monitor theenhancement of the quantum emitters in real-time with nanoscale spatialresolution. The operando measurement and manipulation of single photon emittersdemonstrated here provides a new foundation for the control of emitter-cavityinteractions in integrated quantum photonics.

Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters