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Collisions between electrons and holes can dominate the carrier scattering inclean graphene samples in the vicinity of charge neutrality point. Whileelectron-hole limited resistance in pristine gapless graphene is well-studied,its evolution with induction of band gap $E_g$ is less explored. Here, wederive the functional dependence of electron-hole limited resistance of gappedgraphene $\rho_{eh}$ on the ratio of gap and thermal energy $E_g/kT$. At lowtemperatures and large band gaps, the resistance grows linearly with $E_g/kT$,and possesses a minimum at $E_g \approx 2.5 kT$. This contrast to the Arrheniusactivation-type behaviour for intrinsic semiconductors. Introduction ofimpurities restores the Arrhenius law for resistivity at low temperaturesand/or high doping densities. The hallmark of electron-hole collision effectsin graphene resistivity at charge neutrality is the crossover betweenexponential and power-law resistivity scalings with temperature.

Electron-hole collision-limited resistance of gapped graphene