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Dimensional confinement has shown to be an effective strategy to tunecompeting degrees of freedom in complex oxides. Here, we achieved atomiclayered growth of trigonal vanadium sesquioxide (V2O3) by means ofoxygen-assisted molecular beam epitaxy. This led to a series of high-qualityepitaxial ultrathin V2O3 films down to unit cell thickness, enabling the studyof the intrinsic electron correlations upon confinement. By electrical andoptical measurements, we demonstrate a dimensional confinement-inducedmetal-insulator transition in these ultrathin films. We shed light on theMott-Hubbard nature of this transition, revealing an abrupt vanishing of thequasiparticle weight as demonstrated by photoemission spectroscopy.Furthermore, we prove that dimensional confinement acts as an effectiveout-of-plane stress. This highlights the structural component of correlatedoxides in a confined architecture, while opening an avenue to control bothin-plane and out-of-plane lattice components by epitaxial strain andconfinement, respectively.

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films